SEP8706 Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package || SEP8706-003
Артикул: SEP8706-003
Наименование: SEP8706 Series AlGaAs Infrared Emitting Diode, Side-emitting Plastic Package || SEP8706-003
Производитель: Honeywell
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Description | The SEP8706 is an aluminum gallium arsenide infrared emitting diode molded in a side-emitting smoke gray plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package. These devices typically exhibit 70% greater power intensity than gallium arsenide devices at the same forward current. | Features | - Side-looking plastic package
- 50 ° (nominal) beam angle
- 880 nm wavelength
- Higher output power than GaAs at equivalent drive current
- Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger
| | | Product Specifications | Series Name | SEP8706 | Product Type | IR Component | Power Output | 0.65 mW/cm² min | Beam Angle (Degree) | 50 | Package Type | Side-Emitting | Package Components | Plastic | Forward Current | 20 mA | Continuous Forward Current | 50 mA | Forward Voltage | 1.7 V | Reverse Breakdown Voltage | 3 V | Output Wavelength | 880 nm | Spectral Bandwidth | 80 nm | Spectral Shift With Temperature | 0.2 nm/°C | Rise and Fall Time | 0.7 µs | Power Dissipation | 100 mW | Operating Temperature | -40 °C to 85 °C [-40 °F to 185 °F] | Availability | Global |
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